| PART |
Description |
Maker |
| IDT72V82L20PA IDT72V82L15PA 72V84_DS_9983 IDT72V85 |
4K x 9 DualAsync FIFO, 3.3V
3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9, DUAL 1,024 x 9 DUAL 2,048 x 9, DUAL 4,096 X 9
From old datasheet system
3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9 DUAL 1024 x 9 DUAL 2048 x 9 DUAL 4096 X 9
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT72V01-12 72V06L15JGI8 72V06L25JGI8 72V06L15JG8 |
3.3 VOLT CMOS ASYNCHRONOUS FIFO
|
Integrated Device Techn...
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| IDT7202LA IDT7202LA120D IDT7202LA120DB IDT7202LA12 |
CMOS ASYNCHRONOUS FIFO 256 x 9 512 x 9 1K x 9
60A, 400V UItrafast Rectifier; Package: TO-247; No of Pins: 2; Container: Rail
CMOS ASYNCHRONOUS FIFO 256 x 9 / 512 x 9 / 1K x 9
CMOS ASYNCHRONOUS FIFO 256 x 9/ 512 x 9/ 1K x 9
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Ultrafast IGBT
RES 205K-OHM 1% 0.063W 100PPM THK-FILM SMD-0402 TR-7-PA2MM
400V N-Channel Logic Level IGBT; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
30A/200V Ultra Fast Recovery Rectifier Co-Pak; Package: TO-3P; No of Pins: 3; Container: Rail
6A/1500V Damper and 20A/600V Modulation Diode; Package: TO-220F; No of Pins: 3; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: SOIC; No of Pins: 14; Container: Tape & Reel
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
S-Interface 16 Pin DIP (BSEN60950), RoHS compatible CMOS异步FIFO56 × 912 × 9，每1000 × 9
Single, High Speed, 2.5V to 12V, Rail to Rail Amplifier CMOS异步FIFO56 × 912 × 9，每1000 × 9
1200V NPT-Trench IGBT; Package: TT3P0; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 15 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 15 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 80 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDSO28
1200V NPT IGBT; Package: TO-264; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 35 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 30 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CQCC32
1200V NPT-Trench IGBT CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 25 ns, CDIP28
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 50 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 40 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 65 ns, PQCC32
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 74LCX652RM13TR |
LOW VOLT. CMOS OCTAL BUS TRANSCEIVER/REGISTER WITH 5 VOLT TOLERANT INPUTS AND OUTPUTS(3-STATE)
|
STMicroelectronics
|
| AT29BV040A AT29BV040A-20TC AT29BV040A-20TI AT29BV0 |
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
4M bit, 2.7-Volt Read and 2.7-Volt Write Flash
|
ATMEL[ATMEL Corporation]
|
| RC86L60-3 RC86L60-2 RC86L60-1 |
CMOS, 3.3 Volt / 5 Volt Voice Synthesizer Chipset
|
List of Unclassifed Manufacturers
|
| 5962-9052502MQA 5962-9052501MQA |
CMOS universal asynchronous receiver transmitter (UART), 8MHz = 500K BAUD
CMOS universal asynchronous receiver transmitter (UART), 2MHz = 125K BAUD
|
Intersil
|
| AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby
THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta
DB25SC37
DSUB
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| IDT7207L20J IDT7207L20JB IDT7207L15J IDT7207L15JB |
CMOS ASYNCHRONOUS FIFO 32,768 x 9
CMOS ASYNCHRONOUS FIFO 32768 x 9
ER 3C 3#16 PIN RECP BOX
ER 12C 12#12 SKT RECP
ER 3C 3#16S PIN RECP BOX 32K X 9 OTHER FIFO, 15 ns, CQCC32
ER 4C 4#16S PIN RECP LINE ER 4C 46S 线性插
ER 2C 2#16S PIN RECP BOX 的CMOS异步FIFO 32768 × 9
LVDS 21-Bit Serializers/De-Serializers 32K X 9 OTHER FIFO, 20 ns, QCC32
CMOS ASYNCHRONOUS FIFO 32/768 x 9
LVDS 21-Bit Serializers/De-Serializers; ; No of Pins: 48; Container: Rail
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
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Advanced Micro Devices, Inc.
|
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